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Title: Efficient semiconductor light-emitting device and method

Abstract

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Inventors:
 [1];  [1];  [2]
  1. Albuquerque, NM
  2. (Albuquerque, NM)
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870308
Patent Number(s):
5493577
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficient; semiconductor; light-emitting; device; method; provided; control; layer; region; annular; oxidized; portion; channel; injection; current; active; provide; lateral; refractive; index; profile; guiding; light; generated; periodic; composition; grading; mirror; stacks; provides; reduced; operating; voltage; efficiency; generation; formed; resonant-cavity; diode; rcled; vertical-cavity; surface-emitting; laser; vcsel; cavity surface; surface-emitting laser; emitting diode; operating voltage; light-emitting diode; vertical-cavity surface-emitting; device provides; active region; refractive index; light generated; resonant-cavity light-emitting; semiconductor light-emitting; emitting laser; emitting device; light-emitting device; lateral refractive; index profile; oxidized portion; /372/

Citation Formats

Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P.. Efficient semiconductor light-emitting device and method. United States: N. p., 1996. Web.
Choquette, Kent D, Lear, Kevin L, & Schneider, Jr., Richard P.. Efficient semiconductor light-emitting device and method. United States.
Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P.. Mon . "Efficient semiconductor light-emitting device and method". United States. https://www.osti.gov/servlets/purl/870308.
@article{osti_870308,
title = {Efficient semiconductor light-emitting device and method},
author = {Choquette, Kent D and Lear, Kevin L and Schneider, Jr., Richard P.},
abstractNote = {A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

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Works referenced in this record:

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994


Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994


Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm
journal, May 1990


Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994


Low threshold half-wave vertical-cavity lasers
journal, November 1994


Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994


Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994


Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994


Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers
journal, January 1991