Efficient semiconductor light-emitting device and method
Abstract
A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).
- Inventors:
-
- Albuquerque, NM
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 870308
- Patent Number(s):
- 5493577
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- efficient; semiconductor; light-emitting; device; method; provided; control; layer; region; annular; oxidized; portion; channel; injection; current; active; provide; lateral; refractive; index; profile; guiding; light; generated; periodic; composition; grading; mirror; stacks; provides; reduced; operating; voltage; efficiency; generation; formed; resonant-cavity; diode; rcled; vertical-cavity; surface-emitting; laser; vcsel; cavity surface; surface-emitting laser; emitting diode; operating voltage; light-emitting diode; vertical-cavity surface-emitting; device provides; active region; refractive index; light generated; resonant-cavity light-emitting; semiconductor light-emitting; emitting laser; emitting device; light-emitting device; lateral refractive; index profile; oxidized portion; /372/
Citation Formats
Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P. Efficient semiconductor light-emitting device and method. United States: N. p., 1996.
Web.
Choquette, Kent D, Lear, Kevin L, & Schneider, Jr., Richard P. Efficient semiconductor light-emitting device and method. United States.
Choquette, Kent D, Lear, Kevin L, and Schneider, Jr., Richard P. Mon .
"Efficient semiconductor light-emitting device and method". United States. https://www.osti.gov/servlets/purl/870308.
@article{osti_870308,
title = {Efficient semiconductor light-emitting device and method},
author = {Choquette, Kent D and Lear, Kevin L and Schneider, Jr., Richard P.},
abstractNote = {A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}
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