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Title: Efficient semiconductor light-emitting device and method

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5493577
Contract Number:
Research Org:
Country of Publication:
United States
efficient; semiconductor; light-emitting; device; method; provided; control; layer; region; annular; oxidized; portion; channel; injection; current; active; provide; lateral; refractive; index; profile; guiding; light; generated; periodic; composition; grading; mirror; stacks; provides; reduced; operating; voltage; efficiency; generation; formed; resonant-cavity; diode; rcled; vertical-cavity; surface-emitting; laser; vcsel; cavity surface; surface-emitting laser; emitting diode; operating voltage; light-emitting diode; vertical-cavity surface-emitting; device provides; active region; refractive index; light generated; resonant-cavity light-emitting; semiconductor light-emitting; emitting laser; emitting device; light-emitting device; lateral refractive; index profile; oxidized portion; /372/