Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same
Abstract
A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.
- Inventors:
- Issue Date:
- Research Org.:
- Lehigh University, Bethlehem, PA, USA
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1108717
- Patent Number(s):
- 8586963
- Application Number:
- 12/963,098
- Assignee:
- Lehigh University (Bethlehem, PA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FC26-08NT01581
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Tansu, Nelson, Gilchrist, James F, Ee, Yik-Khoon, and Kumnorkaew, Pisist. Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same. United States: N. p., 2013.
Web.
Tansu, Nelson, Gilchrist, James F, Ee, Yik-Khoon, & Kumnorkaew, Pisist. Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same. United States.
Tansu, Nelson, Gilchrist, James F, Ee, Yik-Khoon, and Kumnorkaew, Pisist. Tue .
"Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same". United States. https://www.osti.gov/servlets/purl/1108717.
@article{osti_1108717,
title = {Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same},
author = {Tansu, Nelson and Gilchrist, James F and Ee, Yik-Khoon and Kumnorkaew, Pisist},
abstractNote = {A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}
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Works referenced in this record:
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
journal, January 2009
- Ee, Yik-Khoon; Kumnorkaew, Pisist; Arif, Ronald A.
- Optics Express, Vol. 17, Issue 16
Light emitting diodes including pedestals
patent, April 2006
- Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
- US Patent Document 7,026,659
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
journal, September 2008
- McGroddy, K.; David, A.; Matioli, E.
- Applied Physics Letters, Vol. 93, Issue 10
GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses
journal, March 2004
- Choi, H. W.; Liu, C.; Gu, E.
- Applied Physics Letters, Vol. 84, Issue 13
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
patent, January 2009
- Feezell, Daniel F.; Cohen, Daniel A.; Farrell, Robert M.
- US Patent Document 7,480,322
III-nitride light emitting devices grown on templates to reduce strain
patent, June 2009
- Grillot, Patrick N.; Gardner, Nathan; Goetz, Werner
- US Patent Document 7,547,908
Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p -GaN surface
journal, June 2003
- Huh, Chul; Lee, Kug-Seung; Kang, Eun-Jeong
- Journal of Applied Physics, Vol. 93, Issue 11
Investigation of the Deposition of Microsphere Monolayers for Fabrication of Microlens Arrays
journal, November 2008
- Kumnorkaew, Pisist; Ee, Yik-Khoon; Tansu, Nelson
- Langmuir, Vol. 24, Issue 21
Package for a light emitting element with integrated electrostatic discharge protection
patent, May 2009
- Murphy, Thomas
- US Patent Document 7,528,422
Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
journal, November 2007
- Ee, Yik-Khoon; Arif, Ronald A.; Tansu, Nelson
- Applied Physics Letters, Vol. 91, Issue 22
GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof
patent, May 2006
- Tadatomo, Kazuyuki; Okagawa, Hiroaki; Ouchi, Yoichiro
- US Patent Document 7,053,420
Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs
journal, June 2007
- Lee, Jae-Soong; Lee, Joonhee; Kim, Sunghwan
- physica status solidi (c), Vol. 4, Issue 7
Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
journal, July 2009
- Yik-Khoon Ee, ; Kumnorkaew, P.; Arif, R. A.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4
Nitride based semiconductor light-emitting device
patent, December 2005
- Yamaguchi, Atsushi; Kuramoto, Masaru; Nido, Masaaki
- US Patent Document 6,977,952
Light emitting diodes including transparent oxide layers
patent, September 2008
- Slater, Jr., David B.; Glass, Robert C.; Swoboda, Charles M.
- US Patent Document 7,420,222
Ordering parameters of self-organized three-dimensional quantum-dot lattices determined from anomalous x-ray diffraction
journal, February 2004
- Lechner, R. T.; Schülli, T. U.; Holý, V.
- Applied Physics Letters, Vol. 84, Issue 6
Enhanced Light Extraction in GaInN Light-Emitting Diode With Pyramid Reflector
journal, January 2006
- Xi, J. -Q.; Luo, Hong; Pasquale, Alyssa J.
- IEEE Photonics Technology Letters, Vol. 18, Issue 22
Efficient light extraction method and device
patent, December 2011
- Tansu, Nelson; Ee, Yik Khoon; Gilchrist, James F.
- US Patent Document 8,076,667