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Title: High throughput laser processing

Abstract

A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

Inventors:
; ; ;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1337687
Patent Number(s):
9,527,164
Application Number:
14/491,662
Assignee:
SunPower Corporation (San Jose, CA GFO
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 19
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Harley, Gabriel, Pass, Thomas, Cousins, Peter John, and Viatella, John. High throughput laser processing. United States: N. p., 2016. Web.
Harley, Gabriel, Pass, Thomas, Cousins, Peter John, & Viatella, John. High throughput laser processing. United States.
Harley, Gabriel, Pass, Thomas, Cousins, Peter John, and Viatella, John. Tue . "High throughput laser processing". United States. https://www.osti.gov/servlets/purl/1337687.
@article{osti_1337687,
title = {High throughput laser processing},
author = {Harley, Gabriel and Pass, Thomas and Cousins, Peter John and Viatella, John},
abstractNote = {A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {12}
}

Patent:

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