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Title: Thin film photovoltaic devices with a minimally conductive buffer layer

Abstract

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Inventors:
;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1332109
Patent Number(s):
9,496,426
Application Number:
14/377,763
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Feb 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Barnes, Teresa M., and Burst, James. Thin film photovoltaic devices with a minimally conductive buffer layer. United States: N. p., 2016. Web.
Barnes, Teresa M., & Burst, James. Thin film photovoltaic devices with a minimally conductive buffer layer. United States.
Barnes, Teresa M., and Burst, James. Tue . "Thin film photovoltaic devices with a minimally conductive buffer layer". United States. https://www.osti.gov/servlets/purl/1332109.
@article{osti_1332109,
title = {Thin film photovoltaic devices with a minimally conductive buffer layer},
author = {Barnes, Teresa M. and Burst, James},
abstractNote = {A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

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