Photovoltaic devices comprising zinc stannate buffer layer and method for making

Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J

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Title: Photovoltaic devices comprising zinc stannate buffer layer and method for making

Abstract

A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Inventors:

Wu, Xuanzhi ^[1]; Sheldon, Peter ^[2]; Coutts, Timothy J ^[2]

Golden, CO
Lakewood, CO

Issue Date:: 2001-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 873475

Patent Number(s):: 6169246

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/03925 - {including AIIBVI compound materials, e.g. CdTe, CdS}
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/1884 - {Manufacture of transparent electrodes, e.g. TCO, ITO}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

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DOE Contract Number:: AC36-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: photovoltaic; devices; comprising; zinc; stannate; buffer; layer; method; device; zn; sno; disposed; semiconductor; junction; structure; transparent; conducting; oxide; tco; prevent; formation; localized; junctions; window; shunting; etched; grain; boundaries; semiconductors; relieve; stresses; improve; adhesion; layers; conducting oxide; photovoltaic devices; buffer layer; grain boundaries; photovoltaic device; semiconductor layer; zinc stannate; semiconductor junction; devices comprising; transparent conducting; comprising zinc; prevent formation; etched grain; /136/438/

Citation Formats


                    Wu, Xuanzhi, Sheldon, Peter, and Coutts, Timothy J. Photovoltaic devices comprising zinc stannate buffer layer and method for making.  United States: N. p., 2001. 
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                    Wu, Xuanzhi, Sheldon, Peter, & Coutts, Timothy J. Photovoltaic devices comprising zinc stannate buffer layer and method for making.  United States.

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                    Wu, Xuanzhi, Sheldon, Peter, and Coutts, Timothy J. Mon .  
        "Photovoltaic devices comprising zinc stannate buffer layer and method for making".  United States.  https://www.osti.gov/servlets/purl/873475.

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@article{osti_873475,

  title        = {Photovoltaic devices comprising zinc stannate buffer layer and method for making},

  author       = {Wu, Xuanzhi and Sheldon, Peter and Coutts, Timothy J},

  abstractNote = {A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2001},

  month        = {1}

}

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Works referenced in this record:

Large-area CdS/CdTe photovoltaic cells
journal, January 1988

Jordan, John F.; Albright, Scot P.
Solar Cells, Vol. 23, Issue 1-2
https://doi.org/10.1016/0379-6787(88)90010-5

Electrodeposited CdTe and HgCdTe solar cells
journal, January 1988

Basol, Bulent M.
Solar Cells, Vol. 23, Issue 1-2
https://doi.org/10.1016/0379-6787(88)90008-7

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Similar Records

Title: Photovoltaic devices comprising zinc stannate buffer layer and method for making

Abstract

Citation Formats

Large-area CdS/CdTe photovoltaic cells journal, January 1988

Electrodeposited CdTe and HgCdTe solar cells journal, January 1988

Large-area CdS/CdTe photovoltaic cells
journal, January 1988

Electrodeposited CdTe and HgCdTe solar cells
journal, January 1988