Magnetic multilayer structure
Abstract
A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corporation, Armonk NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1260217
- Patent Number(s):
- 9384879
- Application Number:
- 14/155,552
- Assignee:
- International Business Machines Corporation
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
- DOE Contract Number:
- EE0002892
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Jan 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Magnetic multilayer structure. United States: N. p., 2016.
Web.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, & Webb, Bucknell C. Magnetic multilayer structure. United States.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Tue .
"Magnetic multilayer structure". United States. https://www.osti.gov/servlets/purl/1260217.
@article{osti_1260217,
title = {Magnetic multilayer structure},
author = {Herget, Philipp and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang and Webb, Bucknell C.},
abstractNote = {A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {7}
}
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Works referenced in this record:
Method of forming an inductor
patent, June 2008
- Ahn, Kie Y.; Forbes, Leonard
- US Patent Document 7,380,328
Laminating magnetic materials in a semiconductor device
patent, July 2010
- Fajardo, Arnel M.; Andideh, Ebrahim; Park, Changmin
- US Patent Document 7,755,124
Laminated magnetic thin films for magnetic recording with weak ferromagnetic coupling
patent, September 2012
- Berger, Andreas; Do, Hoa Van; Fullerton, Eric
- US Patent Document 8,263,239
Low-Cost Non-Volatile Flash-Ram Memory
patent-application, February 2009
- Ranjan, Rajiv Yadav; Keshtbod, Parviz; Assar, Mahmud
- US Patent Application 12/182996; 20090046501
On Chip Integrated Inductor
patent-application, October 2012
- Golubovic, Dusan; Fotopoulou, Kyriaki
- US Patent Application 13/513834; 20120248570