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Title: Magnetic multilayer structure

Abstract

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1532074
Patent Number(s):
9929209
Application Number:
15/414,997
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
DOE Contract Number:  
EE0002892
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017-01-25
Country of Publication:
United States
Language:
English

Citation Formats

Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Magnetic multilayer structure. United States: N. p., 2018. Web.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, & Webb, Bucknell C. Magnetic multilayer structure. United States.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Tue . "Magnetic multilayer structure". United States. https://www.osti.gov/servlets/purl/1532074.
@article{osti_1532074,
title = {Magnetic multilayer structure},
author = {Herget, Philipp and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang and Webb, Bucknell C.},
abstractNote = {A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

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Works referenced in this record:

Magnetic element with reduced shield-to-shield spacing
patent, April 2016


Laminated magnetic thin films for magnetic recording with weak ferromagnetic coupling
patent, September 2012


Laminating magnetic materials in a semiconductor device
patent, July 2010


Method of forming an inductor
patent, June 2008


Module having a stacked magnetic device and semiconductor device and method of forming the same
patent, December 2012