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Title: Long working distance interference microscope

Abstract

Disclosed is a long working distance interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. The long working distance of 10-30 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-D height profiles of MEMS test structures to be acquired across an entire wafer. A well-matched pair of reference/sample objectives is not required, significantly reducing the cost of this microscope, as compared to a Linnik microinterferometer.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174810
Patent Number(s):
6721094
Application Number:
09/800,047
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G - PHYSICS G01 - MEASURING G01B - MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Sinclair, Michael B., DeBoer, Maarten P., and Smith, Norman F. Long working distance interference microscope. United States: N. p., 2004. Web.
Sinclair, Michael B., DeBoer, Maarten P., & Smith, Norman F. Long working distance interference microscope. United States.
Sinclair, Michael B., DeBoer, Maarten P., and Smith, Norman F. Tue . "Long working distance interference microscope". United States. https://www.osti.gov/servlets/purl/1174810.
@article{osti_1174810,
title = {Long working distance interference microscope},
author = {Sinclair, Michael B. and DeBoer, Maarten P. and Smith, Norman F.},
abstractNote = {Disclosed is a long working distance interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. The long working distance of 10-30 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-D height profiles of MEMS test structures to be acquired across an entire wafer. A well-matched pair of reference/sample objectives is not required, significantly reducing the cost of this microscope, as compared to a Linnik microinterferometer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {4}
}

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Works referenced in this record:

Phase-shifting polarization interferometry for microstructure inspection
conference, August 1999


Stroboscopic interferometer system for dynamic MEMS characterization
journal, December 2000


Integrated Platform for Testing MEMS Mechanical Properties at the Wafer Scale by the IMaP Methodology
book, January 2001


Linnik microscope imaging of integrated circuit structures
journal, January 1996


Small displacement analysis of microaccelerometer by integrated phase-shifting method
conference, August 1999


Nanometer resolution of three-dimensional motions using video interference microscopy
conference, January 1999

  • Hemmert, W.; Mermelstein, M. S.; Freeman, D. M.
  • Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291)
  • https://doi.org/10.1109/MEMSYS.1999.746842