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Title: Long working distance incoherent interference microscope

Abstract

A full-field imaging, long working distance, incoherent interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. A long working distance greater than 10 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-dimensional height profiles of MEMS test structures to be acquired across an entire wafer while being actively probed, and, optionally, through a transparent window. An optically identical pair of sample and reference arm objectives is not required, which reduces the overall system cost, and also the cost and time required to change sample magnifications. Using a LED source, high magnification (e.g., 50.times.) can be obtained having excellent image quality, straight fringes, and high fringe contrast.

Inventors:
 [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
908523
Patent Number(s):
7034271
Application Number:
10/857,115
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Sinclair, Michael B, and De Boer, Maarten P. Long working distance incoherent interference microscope. United States: N. p., 2006. Web.
Sinclair, Michael B, & De Boer, Maarten P. Long working distance incoherent interference microscope. United States.
Sinclair, Michael B, and De Boer, Maarten P. Tue . "Long working distance incoherent interference microscope". United States. https://www.osti.gov/servlets/purl/908523.
@article{osti_908523,
title = {Long working distance incoherent interference microscope},
author = {Sinclair, Michael B and De Boer, Maarten P},
abstractNote = {A full-field imaging, long working distance, incoherent interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. A long working distance greater than 10 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-dimensional height profiles of MEMS test structures to be acquired across an entire wafer while being actively probed, and, optionally, through a transparent window. An optically identical pair of sample and reference arm objectives is not required, which reduces the overall system cost, and also the cost and time required to change sample magnifications. Using a LED source, high magnification (e.g., 50.times.) can be obtained having excellent image quality, straight fringes, and high fringe contrast.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {4}
}

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Works referenced in this record:

Interference microscopy for three-dimensional imaging with wavelength-to-depth encoding
journal, January 2000


Linnik microscope imaging of integrated circuit structures
journal, January 1996


Nanometer resolution of three-dimensional motions using video interference microscopy
conference, January 1999

  • Hemmert, W.; Mermelstein, M. S.; Freeman, D. M.
  • Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291)
  • https://doi.org/10.1109/MEMSYS.1999.746842