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Title: Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing

Abstract

Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.

Inventors:
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174322
Patent Number(s):
6,562,518
Application Number:
09/818,490
Assignee:
Lockheed Martin Energy Research Corporation (Oak Ridge, TN) OSTI
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bates, John B. Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. United States: N. p., 2003. Web.
Bates, John B. Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. United States.
Bates, John B. Tue . "Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing". United States. https://www.osti.gov/servlets/purl/1174322.
@article{osti_1174322,
title = {Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing},
author = {Bates, John B.},
abstractNote = {Systems and methods are described for fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing. A method of forming a lithium cobalt oxide film includes depositing a film of lithium cobalt oxide on a substrate; rapidly heating the film of lithium cobalt oxide to a target temperature; and maintaining the film of lithium cobalt oxide at the target temperature for a target annealing time of at most, approximately 60 minutes. The systems and methods provide advantages because they require less time to implement and are, therefore less costly than previous techniques.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {5}
}

Patent:

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