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Title: Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
Inventors:
;
Issue Date:
OSTI Identifier:
1167224
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
8,932,403
Application Number:
13/113,123
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2011 May 23
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY