Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
Abstract
A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1167224
- Patent Number(s):
- 8932403
- Application Number:
- 13/113,123
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 May 23
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Li, Qiming, and Wang, George T. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces. United States: N. p., 2015.
Web.
Li, Qiming, & Wang, George T. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces. United States.
Li, Qiming, and Wang, George T. Tue .
"Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces". United States. https://www.osti.gov/servlets/purl/1167224.
@article{osti_1167224,
title = {Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces},
author = {Li, Qiming and Wang, George T},
abstractNote = {A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}
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Works referenced in this record:
Process of producing semiconductor article
patent, April 2002
- Sato, Nobuhiko
- US Patent Document 6,375,738
Use of sacrificial layers in the manufacture of high performance systems on tailored substrates
patent, December 2007
- Fonash, Stephen J.; Li, Handong; Lee, Youngchul
- US Patent Document 7,309,620
Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element
patent, April 2008
- Yotsuhashi, Satoshi; Adachi, Hideaki; Sugita, Yasunari
- US Patent Document 7,351,906
Diamond based substrate for electronic devices
patent, November 2010
- Whitehead, Andrew John; Wort, Christopher John Howard; Scarsbrook, Geoffrey Alan
- US Patent Document 7,842,134
Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Sub-micrometer-sized Silica Balls
journal, November 2006
- An, S. J.; Hong, Y. J.; Yi, G.-C.
- Advanced Materials, Vol. 18, Issue 21, p. 2833-2836
A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
journal, April 2010
- Zang, Ke Yan; Cheong, Davy W. C.; Liu, Hong Fei
- Nanoscale Research Letters, Vol. 5, Issue 6
High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
journal, March 2008
- Ueda, Kazumasa; Tsuchida, Yoshihiko; Hagura, Nobuhiro
- Applied Physics Letters, Vol. 92, Issue 10