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Title: Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

Abstract

A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1167224
Patent Number(s):
8,932,403
Application Number:
13/113,123
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 May 23
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Li, Qiming, and Wang, George T. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces. United States: N. p., 2015. Web.
Li, Qiming, & Wang, George T. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces. United States.
Li, Qiming, and Wang, George T. Tue . "Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces". United States. https://www.osti.gov/servlets/purl/1167224.
@article{osti_1167224,
title = {Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces},
author = {Li, Qiming and Wang, George T},
abstractNote = {A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}

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Works referenced in this record:

Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Sub-micrometer-sized Silica Balls
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A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
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High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
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  • Ueda, Kazumasa; Tsuchida, Yoshihiko; Hagura, Nobuhiro
  • Applied Physics Letters, Vol. 92, Issue 10
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