Title: Room temperature aluminum antimonide radiation detector and methods thereof

Abstract

In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

Inventors:

Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

Issue Date:

Tue Mar 03 00:00:00 EST 2015

Research Org.:

Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1171651

Patent Number(s):

8969803

Application Number:

12/774,388

Assignee:

Lawrence Livermore National Security, LLC (Livermore, CA)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B11/04 - adding crystallising materials or reactants forming it in situ to the melt
C30B15/04 - adding doping materials, e.g. for n-p-junction
C30B29/40 - AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02549 - {Antimonides}
H01L21/02573 - {Conductivity type}

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DOE Contract Number:  

AC52-07NA27344

Resource Type:

Patent

Resource Relation:

Patent File Date: 2010 May 05

Country of Publication:

United States

Language:

English

Subject:

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY