U.S. Department of EnergyOffice of Scientific and Technical Information
Polarization rotation in a ferroelectric BaTiO$$_3$$ film through low-energy He-implantation
Abstract
Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$$_3$$ thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film's top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method's compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.
- Authors:
-
- Ames Laboratory (AMES), Ames, IA (United States); Ames National Laboratory
- Iowa State Univ., Ames, IA (United States)
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Martin-Luther-University
- Ames Lab., and Iowa State Univ., Ames, IA (United States)
- Publication Date:
- Other Number(s):
- AL-DS-758
- DOE Contract Number:
- AC02-07CH11358
- Research Org.:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 2545077
- DOI:
- https://doi.org/10.60893/figshare.apm.c.7666964.v1
Citation Formats
Luo, Liang, Zhi, Zhi Xiang, Brahlek, Matthew, Dorr, Kathrin, Ward, Thomas, Roth, Robert, Herklotz, Andreas, Park, Joong Mak, and Wang, Jigang. Polarization rotation in a ferroelectric BaTiO$_3$ film through low-energy He-implantation. United States: N. p., 2025.
Web. doi:10.60893/figshare.apm.c.7666964.v1.
Luo, Liang, Zhi, Zhi Xiang, Brahlek, Matthew, Dorr, Kathrin, Ward, Thomas, Roth, Robert, Herklotz, Andreas, Park, Joong Mak, & Wang, Jigang. Polarization rotation in a ferroelectric BaTiO$_3$ film through low-energy He-implantation. United States. doi:https://doi.org/10.60893/figshare.apm.c.7666964.v1
Luo, Liang, Zhi, Zhi Xiang, Brahlek, Matthew, Dorr, Kathrin, Ward, Thomas, Roth, Robert, Herklotz, Andreas, Park, Joong Mak, and Wang, Jigang. 2025.
"Polarization rotation in a ferroelectric BaTiO$_3$ film through low-energy He-implantation". United States. doi:https://doi.org/10.60893/figshare.apm.c.7666964.v1. https://www.osti.gov/servlets/purl/2545077. Pub date:Sat Mar 01 23:00:00 EST 2025
@article{osti_2545077,
title = {Polarization rotation in a ferroelectric BaTiO$_3$ film through low-energy He-implantation},
author = {Luo, Liang and Zhi, Zhi Xiang and Brahlek, Matthew and Dorr, Kathrin and Ward, Thomas and Roth, Robert and Herklotz, Andreas and Park, Joong Mak and Wang, Jigang},
abstractNote = {Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$_3$ thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film's top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method's compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.},
doi = {10.60893/figshare.apm.c.7666964.v1},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Mar 01 23:00:00 EST 2025},
month = {Sat Mar 01 23:00:00 EST 2025}
}