Polarization rotation in a ferroelectric BaTiO3 film through low-energy He-implantation

Herklotz, Andreas; Roth, Robert; Chong, Zhi Xiang; Luo, Liang; Park, Joong Mok; Brahlek, Matthew; Wang, Jigang; Dörr, Kathrin; Ward, Thomas Zac

doi:10.1063/5.0253298

Polarization rotation in a ferroelectric BaTiO3 film through low-energy He-implantation

Journal Article · Sun Mar 02 23:00:00 EST 2025 · APL Materials

DOI:https://doi.org/10.1063/5.0253298· OSTI ID:2526264

; Roth, Robert; ; ; ; ; ; Dörr, Kathrin;

Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO3 thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film’s top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method’s compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.

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Sponsoring Organization:: USDOE

OSTI ID:: 2526264

Alternate ID(s):: OSTI ID: 2557979
OSTI ID: 2538563

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 3 Vol. 13; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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