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Polarization rotation in a ferroelectric BaTiO$$_3$$ film through low-energy He-implantation

Dataset ·
 [1];  [2];  [3];  [4];  [3];  [4];  [4];  [5];  [5]
  1. Ames Laboratory (AMES), Ames, IA (United States); Ames National Laboratory
  2. Iowa State Univ., Ames, IA (United States)
  3. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
  4. Martin-Luther-University
  5. Ames Lab., and Iowa State Univ., Ames, IA (United States)
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Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$$_3$$ thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectric domain state with significant in-plane polarization into a uniform out-of-plane tetragonal phase by selectively modifying the strain state in the film's top region. This structural transition significantly improves domain homogeneity and reduces polarization imprint, leading to symmetric ferroelectric switching characteristics. The demonstrated ability to manipulate ferroelectric domains post-growth enables tailored functional properties without compromising the coherently strained bottom interface. The method's compatibility with semiconductor processing and ability to selectively modify specific regions make it particularly promising for practical implementation in integrated devices. This work establishes a versatile approach for strain-mediated domain engineering that could be extended to a wide range of ferroelectric systems, providing new opportunities for memory, sensing, and photonic applications where precise control of polarization states is essential.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC02-07CH11358
OSTI ID:
2545077
Report Number(s):
AL-DS-758
Country of Publication:
United States
Language:
English

References (1)

Polarization rotation in a ferroelectric BaTiO3 film through low-energy He-implantation journal March 2025

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