Ge {delta}-layers on Si(111) and Si(001) grown by MBE and SPE
- Deutschen Elektronen-Synchrotron, Hamburg (Germany). Hamburger Synchrotronstrahlungslabor
- Univ. Hannover (Germany). Institut fuer Festkoerperphysik
Ge {delta}-layers on Si(111) and Si(001), grown by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) were characterized in-situ by high-resolution low-energy electron-diffraction and post-growth by x-ray standing waves. LEED intensity oscillations are used to determine the growth mode of Ge on Si which is found to proceed in a double bilayer fashion for Ge on Si(111). X-ray standing waves are employed to investigate crystal quality of the Ge layer. SPE on Si(111) requires high annealing temperatures (600 C) for sufficient recrystallization of defects in the Ge {delta}-layer. On Si(001), Ge {delta}-layers of surprisingly high crystalline quality are grown by solid phase epitaxy at room temperature.
- OSTI ID:
- 99495
- Report Number(s):
- CONF-941144--; ISBN 1-55899-277-4
- Country of Publication:
- United States
- Language:
- English
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