X-ray standing wave study of Si/Ge/Si(001) heterostructures grown with Bi as a surfactant.
X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF; OUS
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 961282
- Report Number(s):
- ANL/MSD/JA-46187
- Journal Information:
- Surf. Sci., Journal Name: Surf. Sci. Journal Issue: Mar. 2003 Vol. 529; ISSN SUSCAS; ISSN 0039-6028
- Country of Publication:
- United States
- Language:
- ENGLISH
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