Defects induced by protons and {gamma}-rays in semi-insulating GaAs detectors

Book · Fri Sep 01 04:00:00 EDT 1995

OSTI ID:99472

Castaldini, A; Cavallini, A ^[1]; Del Papa, C ^[1]; Fuochi, G ^[2]; Alietti, M; Canali, C ^[3]; Nava, F ^[3]; Paccagnella, A ^[4]; Lanzieri, C ^[5]

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1. Dipartimento di Fisica, Bologna (Italy)
2. FRAE-CNR, Bologna (Italy)
3. Facolta di Ingegneria, Modena (Italy)
4. Istituto di Elettrotecnica, Cagliari (Italy)
5. ALENIA S.p.A., Roma (Italy)

Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate. Two electron traps at E{sub c}{minus}0.14V(E13) and E{sub c}{minus}0.70eV(E4) and a hole trap at E{sub v}+0.41eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.

• OSTI ID: 99472
• Report Number(s): CONF-941144--; ISBN 1-55899-275-8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CRYSTAL DEFECTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GAMMA RADIATION
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DETECTORS