Ferroelectricity in ultrathin BaTiO{sub 3} films : probing the size effect by ultraviolet Raman spectroscopy.

Journal Article · Wed Oct 21 04:00:00 EDT 2009 · Phys. Rev. Lett.

DOI:https://doi.org/10.1103/PhysRevLett.103.177601· OSTI ID:993706

Tenne, D A; Turner, P; Schmidt, J D; Biegalski, M; Li, Y L; Chen, L Q; Soukiassian, A; Trolier-McKinstry, S; Schlom, D G; Xi, X X; Fong, D D; Fuoss, P H; Eastman, J A; Stephenson, G B; Thompson, C; Streiffer, S K; State, Boise; PNNL,

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature T{sub c} in strained BaTiO{sub 3} films grown on SrTiO{sub 3} substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring T{sub c} in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to T{sub c} tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180{sup o} domains below T{sub c}, and thermodynamic phase-field model calculations of T{sub c} as a function of thickness.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 993706
• Report Number(s): ANL/MSD/JA-68519
• Journal Information: Phys. Rev. Lett., Journal Name: Phys. Rev. Lett. Journal Issue: Oct. 21, 2009 Vol. 103; ISSN 0031-9007
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

43 PARTICLE ACCELERATORS
RAMAN SPECTROSCOPY
SCATTERING
SUBSTRATES
SYNCHROTRONS
THERMODYNAMICS
THICKNESS
TRANSITION TEMPERATURE
TUNING