Ferroelectricity in ultrathin strained BaTiO3 films: probing the size effect by ultraviolet Raman spectroscopy

Journal Article · Fri Oct 23 04:00:00 EDT 2009 · Physical Review Letters, 103(17):Article No. 177601

DOI:https://doi.org/10.1103/PhysRevLett.103.177601· OSTI ID:993362

Tenne, D A; Turner, P; Schmidt, J D; Biegalski, M; Li, Yulan; Chen, L Q; Soukiassian, A; Trolier-McKinstry, S; Schlom, D G; Xi, X X; Fong, D D; Fuoss, P H; Eastman, J A; Stephenson, G B; Thompson, C; Streier, S K

We demonstrate a dramatic effect of film thickness on the ferroelectric phase transition temperature, Tc, in strained BaTiO3 films grown on SrTiO3 substrates. Using variable temperature ultraviolet Raman spectroscopy enables measuring Tc in ¯lms as thin as 1.6 nm, and film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of of 180± domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 993362
• Report Number(s): PNNL-SA-68913; AF5831060
• Journal Information: Physical Review Letters, 103(17):Article No. 177601, Journal Name: Physical Review Letters, 103(17):Article No. 177601 Journal Issue: 17 Vol. 103; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
RAMAN SPECTROSCOPY
SCATTERING
SUBSTRATES
SYNCHROTRONS
THERMODYNAMICS
THICKNESS
TRANSITION TEMPERATURE
TUNING
ferroelectric phase transition
phase-field model
strained BaTiO3 films
ultraviolet Raman spectroscopy