Advanced Surface Polishing for Accelerator Technology using Ion Beams
A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.
- Research Organization:
- Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-06OR23177
- OSTI ID:
- 991231
- Report Number(s):
- JLAB-ACC-08-932; DOE/OR/23177-0868; ANL-MCS-P1531-0808
- Journal Information:
- AIP Conf.Proc., Journal Name: AIP Conf.Proc. Vol. 1099
- Country of Publication:
- United States
- Language:
- English
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Development of gas cluster ion beam surface treatments for reducing field emission and breakdown in RF cavities
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