Liquid Silane Routes to Electronic Materials
- North Dakota State University
New chemistries based upon liquid cyclohexasilane (Si{sub 6}H{sub 12} or CHS) have been used as precursors to silicon-containing electronic materials. Spin-coating of CHS-based inks with subsequent UV light and/or thermal treatment yielded amorphous silicon (a-Si:H) films. While initial ink chemistries gave a-Si:H with high resistivity (i.e., > 10{sup 6} {Omega}.cm), several doping strategies are under development to address this limitation. In this contribution, the current status of solution processed rectifying diodes and field effect transistors fabricated from CHS-based inks will be presented. Additionally, a new printing approach termed collimated aerosol beam direct write (CAB-DW{sup TM}) was developed that allows the deposition of printed Ag lines 5 {mu}m in width. A status update will be given where CHS-based inks have been used to CAB-DW silicon-based features with linewidths <10 {mu}m. Assuming silicon thin film materials with good electrical properties will be developed, there may be significant cost advantages associated with the ability to controllably deposit the semiconductor in a metered fashion.
- Research Organization:
- North Dakota State University
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- FG36-08GO88160
- OSTI ID:
- 990332
- Report Number(s):
- DOE/GO/88160-1
- Country of Publication:
- United States
- Language:
- English
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