Comparative Study of Low-temperature PECVD of Amorphous Silicon using Mono-, Di-, Trisilane and Cyclohexasilane
- North Dakota State Univeristy
The hydrogenated amorphous silicon a-Si:H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si{sub 6}H{sub 12} (CHS). The growth rate of a-Si:H was studied as a function of substrate temperatures in the range of 30 C < T < 450 C using deposition conditions that were optimized for monosilane SiH{sub 4}. The same parameters were used for a-Si:H films grown using disilane (Si{sub 2}H{sub 6}) and trisilane (Si{sub 3}H{sub 8}) precursors. It was found that the a-Si:H film growth rate for CHS is lower with respect to those for mono-, di- and trisilane in an Ar plasma. Addition of {approx}10% of H{sub 2} dramatically increases the deposition rate for CHS-based films to {_}nm/min - a 700% increase. The as-deposited films were characterized by FTIR and Raman spectroscopy to probe the hydrogen content and local bonding environment. It was found that the films grown using Ar/H{sub 2} mixtures as carrier gas have a reduced hydrogen content relative to polysilane fragments indicating higher quality amorphous silicon.
- Research Organization:
- North Dakota State University
- Sponsoring Organization:
- USDOE Assistant Secretary for Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- FG36-08GO88160
- OSTI ID:
- 971602
- Report Number(s):
- DOE/GO/88160-5
- Journal Information:
- Proceedings of the 34th IEEE Photovoltaics Specialists Conference, Journal Name: Proceedings of the 34th IEEE Photovoltaics Specialists Conference
- Country of Publication:
- United States
- Language:
- English
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