Bulk GaN and AIGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models.
- Arizona State University, Tempe, AZ
The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN/GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5 x 10{sup 7} cm/s at 180 kV/cm for the n-type gallium nitride and 3.1 x 10{sup 7} cm/s at 140 kV/cm for the AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 990084
- Report Number(s):
- SAND2005-2129J; JAPIAU; TRN: US201020%%119
- Journal Information:
- Proposed for publication in Journal of Applied Physics., Vol. 97, Issue 6; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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