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High-field electron transport in AlGaN/GaN heterostructures.

Journal Article · · Proposed for publication in Physica Status Solidi.
OSTI ID:972131
Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A pulsed voltage input in combination with a four-point measurement was used in a 50 {Omega} environment to determinethe drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field. These measurements show an apparent saturation velocity near 3.1 x 10{sub 7} cm/s, at a field of 140 kV/cm. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.
Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
972131
Report Number(s):
SAND2005-3565J
Journal Information:
Proposed for publication in Physica Status Solidi., Journal Name: Proposed for publication in Physica Status Solidi.
Country of Publication:
United States
Language:
English

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