Bulk GaN and AIGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models.

Journal Article · Fri Apr 01 04:00:00 EST 2005 · Proposed for publication in Journal of Applied Physics.

OSTI ID:990084

Koleske, Daniel David; Shul, Randy John; Ferry, D K ^[1]; Barker, J M ^[1]

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1. Arizona State University, Tempe, AZ

The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN/GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5 x 10{sup 7} cm/s at 180 kV/cm for the n-type gallium nitride and 3.1 x 10{sup 7} cm/s at 140 kV/cm for the AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 990084
• Report Number(s): SAND2005-2129J
• Journal Information: Proposed for publication in Journal of Applied Physics., Journal Name: Proposed for publication in Journal of Applied Physics. Journal Issue: 6 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC FIELDS
ELECTRON DRIFT
GALLIUM NITRIDES
GEOMETRY
SAPPHIRE
SATURATION
VELOCITY