Twin boundary structure in Bi2Te3 : experiment and theory.
Conference
·
OSTI ID:990064
- Lawrence Berkeley National Laboratory, Berkeley, CA
Establishing the atomic structure and composition of interfaces in thermoelectric materials is important to understanding how these defects mediate thermal and electronic transport. Here, we discuss our experimental observations and theoretical calculations of the Bi{sub 2}Te{sub 3} (0001) basal twin in nanocrystalline Bi{sub 2}Te{sub 3}. This interface is important both because it is common in tetradymite-structured thermoelectric compounds and because it serves as a useful model system for more complex interfaces. Macroscopically, the (0001) twin corresponds to a 180 rotation of the crystal about the [0001] axis, which reverses the stacking of the basal planes. The basal planes of Bi{sub 2}Te{sub 3} are arranged in 5-plane groupings of alternating Bi and Te layers. Microscopically, one envisions three possible interface terminations: at the Te layer in the middle of the 5-layer packet, at a Bi layer, or at the Te-double layer at the junction of the 5-layer packet. Using aberration-corrected HAADF-STEM imaging, we have established that the twin boundary terminates at the Te-double layer. This result is consistent with ab initio calculations, which predict that the lowest energy for the three candidate structures is for this termination.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 990064
- Report Number(s):
- SAND2010-1594C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Dislocations and twinning activated by the abrasion of Al{sub 2}O{sub 3}
Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride
Fabrication of Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2Se multilayered thin film-based integrated cooling devices
Journal Article
·
Thu May 11 00:00:00 EDT 2000
· Acta Materialia
·
OSTI ID:20075940
Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride
Journal Article
·
Tue Apr 23 00:00:00 EDT 2019
· Nature Communications
·
OSTI ID:1515203
Fabrication of Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2Se multilayered thin film-based integrated cooling devices
Journal Article
·
Tue Jun 29 00:00:00 EDT 2010
· Journal of Vacuum Science and Technology A
·
OSTI ID:989169