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Title: Coulomb drag upturn in an undoped electron-hole bilayer in perpendicular and parallel magnetic fields.

Conference ·
OSTI ID:989984

A low-temperature upturn of the Coulomb drag resistivity {rho}{sub D} measured in undoped electron-hole bilayer devices, possibly manifesting from formation of a superfluid condensate or density modulated state, was recently observed. Here the effects of perpendicular and parallel magnetic fields on the drag upturn are examined. Measurements of {rho}{sub D} and drive layer resistivity {rho}{sub xx-e} as a function of temperature and magnetic field in two uEHBL devices are presented. In B{sub {perpendicular}}, the drag upturn was enhanced as the field increased up to roughly .2 T, beyond which oscillations in {rho}{sub D} and {rho}{sub xx-e}, reflecting Landau level formation, begin appearing. A small phase offset between those oscillations, which decreased at higher fields and temperatures, was also observed. In B{sub {parallel}}, the drag upturn magnitude diminished as the field increased. Above the upturn regime, both {rho}{sub D} and {rho}{sub xx-e} were enhanced by B{sub {parallel}}, the latter via decreased screening of the uniform background impurities.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
989984
Report Number(s):
SAND2010-1744C; TRN: US201020%%78
Resource Relation:
Conference: Proposed for presentation at the American Physical Society March Meeting held March 15-19, 2010 in Portland, OR.
Country of Publication:
United States
Language:
English