Extreme ultraviolet mask substrate surface roughness effects on lithography patterning
In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 989849
- Report Number(s):
- LBNL-3825E; TRN: US201019%%907
- Journal Information:
- Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B
- Country of Publication:
- United States
- Language:
- English
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