Extreme ultraviolet mask roughness effects in high numerical aperture lithography

Naulleau, Patrick; Wang, Yow -Gwo; Pistor, Tom

doi:10.1364/AO.57.001724

Extreme ultraviolet mask roughness effects in high numerical aperture lithography

Journal Article · Wed Feb 28 23:00:00 EST 2018 · Applied Optics

DOI:https://doi.org/10.1364/AO.57.001724· OSTI ID:1466716

Naulleau, Patrick ^[1]; Wang, Yow -Gwo ^[2]; Pistor, Tom ^[3]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Panoramic Technology Inc., Burlingame, CA (United States)

Given the reflective nature of extreme ultraviolet lithography and its extremely short operational wavelength, roughness of the optical surfaces is of significant concern. In particular, roughness in the mask multilayer leads to image plane speckle and ultimately patterned line-edge or line-width variability in the imaging process. Here we consider the implications of this effect for future high numerical aperture (NA) systems that are assumed to require anamorphic magnification projection optics. The results show significant anisotropic behavior at high NA as well as a substantial increase in relative patterned line variability in the shadowed direction when comparing 0.55 NA to 0.33 NA, despite the assumption of an anamorphic magnification system. In conclusion, the shadowed-direction patterned line variability is 2× larger than for unshadowed lines, and the majority of the increase in variability occurs in the low frequency regime.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: SC-22.2 USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1466716

Alternate ID(s):: OSTI ID: 1423166

Journal Information:: Applied Optics, Journal Name: Applied Optics Journal Issue: 7 Vol. 57; ISSN 1559-128X; ISSN APOPAI

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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X-ray
extreme ultraviolet (EUV)
photolithography
soft X-rays
ultraviolet

Extreme ultraviolet mask roughness effects in high numerical aperture lithography

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