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Title: Extreme ultraviolet mask roughness effects in high numerical aperture lithography

Journal Article · · Applied Optics
DOI:https://doi.org/10.1364/AO.57.001724· OSTI ID:1466716
 [1];  [2];  [3]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
  3. Panoramic Technology Inc., Burlingame, CA (United States)
+ Show Author Affiliations

Given the reflective nature of extreme ultraviolet lithography and its extremely short operational wavelength, roughness of the optical surfaces is of significant concern. In particular, roughness in the mask multilayer leads to image plane speckle and ultimately patterned line-edge or line-width variability in the imaging process. Here we consider the implications of this effect for future high numerical aperture (NA) systems that are assumed to require anamorphic magnification projection optics. The results show significant anisotropic behavior at high NA as well as a substantial increase in relative patterned line variability in the shadowed direction when comparing 0.55 NA to 0.33 NA, despite the assumption of an anamorphic magnification system. In conclusion, the shadowed-direction patterned line variability is 2× larger than for unshadowed lines, and the majority of the increase in variability occurs in the low frequency regime.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
SC-22.2 USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1466716
Alternate ID(s):
OSTI ID: 1423166
Journal Information:
Applied Optics, Vol. 57, Issue 7; Related Information: © 2018 Optical Society of America.; ISSN 1559-128X
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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Related Subjects

47 OTHER INSTRUMENTATION
photolithography
ultraviolet
X-ray
soft X-rays
extreme ultraviolet (EUV)