An Effective Switching-Off Mechanism for High-Performance Carbon Nanotube Field-Effect Transistors
We report an effective switching-off mechanism for the fabrication of high-performance carbon nanotube field-effect transistors (CNTFETs) formed by ultra-purified single-walled carbon nanotubes (SWCNTs) with p-type Sb{sub 2}Te{sub 3} semiconductor as the source and drain contact material and a narrow platinum gate entirely defined inside the source and drain contact region. CNTFETs show drain-source current (I{sub DS}) as a function of drain-source voltage (V{sub DS}) and gate voltage (V{sub GS}) of similar characteristics to a p-channel junction field-effect transistor (JFET). CNTFETs are normally on, and they can be effectively switched off with applying a positive gate voltage. By localizing the gate action primarily on the SWCNTs, away from the source and drain contacts, we could clearly interpret the beneficial effect of semiconducting contacts on the performance of CNTFETs. The proposed device is novel and could be a solution to the switching-off problem in CNTFETs.
- Research Organization:
- Brookhaven National Laboratory (BNL) Center For Functional Nanomaterials
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 989749
- Report Number(s):
- BNL--94039-2010-JA
- Journal Information:
- Journal of Nanoelectronics and Optoelectronics, Journal Name: Journal of Nanoelectronics and Optoelectronics Journal Issue: 1 Vol. 5; ISSN 1555-130X
- Country of Publication:
- United States
- Language:
- English
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