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Title: Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices

Journal Article · · Micromachines
DOI:https://doi.org/10.3390/mi12010012· OSTI ID:1746996

In this paper, we report the wafer-scale fabrication of carbon nanotube field-effect transistors (CNTFETs) with the dielectrophoresis (DEP) method. Semiconducting carbon nanotubes (CNTs) were positioned as the active channel material in the fabrication of carbon nanotube field-effect transistors (CNTFETs) with dielectrophoresis (DEP). The drain-source current (IDS) was measured as a function of the drain-source voltage (VDS) and gate-source voltage (VGS) from each CNTFET on the fabricated wafer. The IDS on/off ratio was derived for each CNTFET. It was found that 87% of the fabricated CNTFETs was functional, and that among the functional CNTFETs, 30% of the CNTFETs had an IDS on/off ratio larger than 20 while 70% of the CNTFETs had an IDS on/off ratio lower than 20. The highest IDS on/off ratio was about 490. The DEP-based positioning of carbon nanotubes is simple and effective, and the DEP-based device fabrication steps are compatible with Si technology processes and could lead to the wafer-scale fabrication of CNT electronic devices.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOD
Grant/Contract Number:
SC00112704; SC0012704; CBET-1740687; W911NF-16-1-0554; W911NF-17-1-0474
OSTI ID:
1746996
Alternate ID(s):
OSTI ID: 1817069
Journal Information:
Micromachines, Journal Name: Micromachines Vol. 12 Journal Issue: 1; ISSN 2072-666X
Publisher:
MDPI AGCopyright Statement
Country of Publication:
Switzerland
Language:
English

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