Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers (Prop 2003-054)
Journal Article
·
· Journal of Electronic Materials
OSTI ID:989518
- ORNL
- Kansas State University
Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900 C and 1150 C for up to 6 h - highly (0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at a faster rate than the Al-face. At 900 C and 1000 C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face of polycrystalline AlN. At 1100 C and 1150 C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface. The orientation relationship between AlN and Al{sub 2}O{sub 3} was (0001) AlN//(10{bar 1}0) Al{sub 2}O{sub 3} and (1{bar 1}00) AlN//(01{bar 1}2) Al{sub 2}O{sub 3}.
- Research Organization:
- Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory
- Sponsoring Organization:
- EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 989518
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 10 Vol. 34; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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