skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical contact resistance degradation of a hot-switched simulated metal MEMS contact.

Journal Article · · Proposed for publication in Journal of Applied Physics.
OSTI ID:989377

Electrical contact resistance testing was performed by hot-switching a simulated gold-platinum metal microelectromechanical systems contact. The experimental objective was to determine the sensitivity of the contact resistance degradation to current level and environment. The contact resistance increased sharply after 100 hot-switched cycles in air. Hot-switching at a reduced current and in nitrogen atmosphere curtailed contact resistance degradation by several orders of magnitude. The mechanism responsible for the resistance degradation was found to be arc-induced decomposition of adsorbed surface contaminants.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
989377
Report Number(s):
SAND2005-1693J; TRN: US201019%%473
Journal Information:
Proposed for publication in Journal of Applied Physics., Vol. 30, Issue 1; ISSN 1521-3331
Country of Publication:
United States
Language:
English

Similar Records

Silicone oil contamination and electrical contact resistance degradation of low-force gold contacts.
Journal Article · Wed Feb 01 00:00:00 EST 2006 · Proposed for publication in the IEEE Journal of Microelectromechanical Systems. · OSTI ID:989377

A single-asperity study of Au/Au electrical contacts.
Journal Article · Tue Jul 01 00:00:00 EDT 2003 · Proposed for publication in Journal of Applied Physics. · OSTI ID:989377

The electrical and mechanical properties of Au-V and Au-V{sub 2}O{sub 5} thin films for wear-resistant RF MEMS switches
Journal Article · Tue Apr 15 00:00:00 EDT 2008 · Journal of Applied Physics · OSTI ID:989377