Electroluminescence from electrolyte-gated carbon nanotube field-effect transistors.

Journal Article · Sat Aug 01 04:00:00 EDT 2009 · ACS Nano

DOI:https://doi.org/10.1021/nn9005736· OSTI ID:989069

Zaumseil, J; Ho, X; Guest, J R; Wiederrecht, G P; Rogers, J A

We demonstrate near-infrared electroluminescence from ambipolar, electrolyte-gated arrays of highly aligned single-walled carbon nanotubes (SWNT). Using electrolytes instead of traditional oxide dielectrics in carbon nanotube field-effect transistors (FET) facilitates injection and accumulation of high densities of holes and electrons at very low gate voltages with minimal current hysteresis. We observe numerous emission spots, each corresponding to individual nanotubes in the array. The positions of these spots indicate the meeting point of the electron and hole accumulation zones determined by the applied gate and source-drain voltages. The movement of emission spots with gate voltage yields information about relative band gaps, contact resistance, defects, and interaction between carbon nanotubes within the array. Introducing thin layers of HfO{sub 2} and TiO{sub 2} provides a means to modify exciton screening without fundamentally changing the current-voltage characteristics or electroluminescence yield of these devices.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 989069
• Report Number(s): ANL/CNM/JA-64443
• Journal Information: ACS Nano, Journal Name: ACS Nano Journal Issue: 8 ; Aug. 2009 Vol. 3; ISSN 1936-0851
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
CARBON
DEFECTS
DIELECTRIC MATERIALS
ELECTROLUMINESCENCE
ELECTROLYTES
ELECTRONS
EXCITONS
HYSTERESIS
NANOTUBES
OXIDES
TRANSISTORS