Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

Journal Article · Mon Jul 11 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4958851· OSTI ID:22590574

Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth ^[1]; Geier, Michael L.; Hersam, Mark C. ^[2]

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1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
2. Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

• OSTI ID: 22590574
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARBON NANOTUBES
CURRENTS
ELECTRIC POTENTIAL
EQUIPMENT
HOLES
PERFORMANCE
POTENTIALS
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSISTORS
VISIBLE RADIATION