Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface
Journal Article
·
· Applied Physics Letters
OSTI ID:986546
The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 986546
- Report Number(s):
- LBNL-3854E
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 96; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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