U.S. Department of Energy Office of Scientific and Technical Information
Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se2 interface
Journal Article·· ACS Applied Materials and Interfaces
Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Berlin (Germany); Brandenburgische Technische Univ. Cottbus-Senftenberg, Cottbus (Germany)
Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S—In and/or S—Ga bonds at or close to the interface.
Mezher, Michelle, et al. "Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se<sub>2</sub> interface." ACS Applied Materials and Interfaces, vol. 8, no. 48, Nov. 2016. https://doi.org/10.1021/acsami.6b09245
Mezher, Michelle, Garris, Rebekah, Mansfield, Lorelle M., Blum, Monika, Hauschild, Dirk, Horsley, Kimberly, Duncan, Douglas A., Yang, Wanli, Bär, Marcus, Weinhardt, Lothar, Ramanathan, Kannan, & Heske, Clemens (2016). Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se<sub>2</sub> interface. ACS Applied Materials and Interfaces, 8(48). https://doi.org/10.1021/acsami.6b09245
Mezher, Michelle, Garris, Rebekah, Mansfield, Lorelle M., et al., "Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se<sub>2</sub> interface," ACS Applied Materials and Interfaces 8, no. 48 (2016), https://doi.org/10.1021/acsami.6b09245
@article{osti_1337540,
author = {Mezher, Michelle and Garris, Rebekah and Mansfield, Lorelle M. and Blum, Monika and Hauschild, Dirk and Horsley, Kimberly and Duncan, Douglas A. and Yang, Wanli and Bär, Marcus and Weinhardt, Lothar and others},
title = {Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se<sub>2</sub> interface},
annote = {In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S—In and/or S—Ga bonds at or close to the interface.},
doi = {10.1021/acsami.6b09245},
url = {https://www.osti.gov/biblio/1337540},
journal = {ACS Applied Materials and Interfaces},
issn = {ISSN 1944-8244},
number = {48},
volume = {8},
place = {United States},
publisher = {American Chemical Society (ACS)},
year = {2016},
month = {11}}
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); SunShot Foundational Program to Advance Cell Efficiency (F-PACE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1337540
Alternate ID(s):
OSTI ID: 1474987
Report Number(s):
NREL/JA--5K00-67637
Journal Information:
ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 48 Vol. 8; ISSN 1944-8244