Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 986542
- Report Number(s):
- LBNL-3858E; TRN: US201017%%520
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 80, Issue 24; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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