Graphene growth by molecular beam epitaxy on the carbon-face of SiC

Journal Article · Mon Dec 13 00:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3526720· OSTI ID:21518208

Moreau, E; Godey, S; Ferrer, F J; Vignaud, D; Wallart, X ^[1]; Avila, J; Asensio, M C ^[2]; Bournel, F; Gallet, J -J ^[3]

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1. IEMN, UMR CNRS 8520, Avenue Poincare, P.O. Box 60069, 59652 Villeneuve d'Ascq Cedex (France)
2. Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin-BP 48, 91192 Gif sur Yvette Cedex (France)
3. LCPM, Universite Pierre et Marie Curie, UMR CNRS 7614, 75231 Paris Cedex (France)

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.

• OSTI ID: 21518208
• Journal Information: Applied Physics Letters, Vol. 97, Issue 24; Other Information: DOI: 10.1063/1.3526720; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CARBON
DECOUPLING
ELECTRON DIFFRACTION
GRAPHITIZATION
HONEYCOMB STRUCTURES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
SILICON CARBIDES
SYNCHROTRONS
ULTRAVIOLET SPECTRA
ACCELERATORS
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CYCLIC ACCELERATORS
DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
MECHANICAL STRUCTURES
MICROSCOPY
NONMETALS
SCATTERING
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY