Quasi-Freestanding multilayer graphene films on the carbon face of SiC
Journal Article
·
· PHYSICAL REVIEW B
OSTI ID:986541
The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 986541
- Report Number(s):
- LBNL-3857E; TRN: US201017%%519
- Journal Information:
- PHYSICAL REVIEW B, Vol. 81, Issue 24; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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