Quasi-Freestanding multilayer graphene films on the carbon face of SiC

Title: Quasi-Freestanding multilayer graphene films on the carbon face of SiC

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Abstract

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

Authors:: Siegel, D A; Hwang, C G; Fedorov, A V; Lanzara, A

Publication Date:: 2010-06-30

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: Materials Sciences Division

OSTI Identifier:: 986541

Report Number(s):: LBNL-3857E
Journal ID: ISSN 1098-0121; TRN: US201017%%519

DOE Contract Number:: DE-AC02-05CH11231

Resource Type:: Journal Article

Journal Name:: PHYSICAL REVIEW B

Additional Journal Information:: Journal Volume: 81; Journal Issue: 24; Journal ID: ISSN 1098-0121

Country of Publication:: United States

Language:: English

Subject:: 36; CARBON; PHOTOEMISSION; SPECTROSCOPY; SUBSTRATES

Citation Formats


                    Siegel, D A, Hwang, C G, Fedorov, A V, and Lanzara, A. Quasi-Freestanding multilayer graphene films on the carbon face of SiC.  United States: N. p., 2010. 
        Web.

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                    Siegel, D A, Hwang, C G, Fedorov, A V, & Lanzara, A. Quasi-Freestanding multilayer graphene films on the carbon face of SiC.  United States.

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                    Siegel, D A, Hwang, C G, Fedorov, A V, and Lanzara, A. Wed .  
        "Quasi-Freestanding multilayer graphene films on the carbon face of SiC".  United States.  https://www.osti.gov/servlets/purl/986541.

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@article{osti_986541,

  title        = {Quasi-Freestanding multilayer graphene films on the carbon face of SiC},

  author       = {Siegel, D A and Hwang, C G and Fedorov, A V and Lanzara, A},

  abstractNote = {The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/986541},
  journal      = {PHYSICAL REVIEW B},

  issn         = {1098-0121},

  number       = 24,

  volume       = 81,

  place        = {United States},

  year         = {2010},

  month        = {6}

}

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