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Title: Quasi-Freestanding multilayer graphene films on the carbon face of SiC

Abstract

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

Authors:
; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
986541
Report Number(s):
LBNL-3857E
Journal ID: ISSN 1098-0121; TRN: US201017%%519
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
PHYSICAL REVIEW B
Additional Journal Information:
Journal Volume: 81; Journal Issue: 24; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36; CARBON; PHOTOEMISSION; SPECTROSCOPY; SUBSTRATES

Citation Formats

Siegel, D A, Hwang, C G, Fedorov, A V, and Lanzara, A. Quasi-Freestanding multilayer graphene films on the carbon face of SiC. United States: N. p., 2010. Web.
Siegel, D A, Hwang, C G, Fedorov, A V, & Lanzara, A. Quasi-Freestanding multilayer graphene films on the carbon face of SiC. United States.
Siegel, D A, Hwang, C G, Fedorov, A V, and Lanzara, A. Wed . "Quasi-Freestanding multilayer graphene films on the carbon face of SiC". United States. https://www.osti.gov/servlets/purl/986541.
@article{osti_986541,
title = {Quasi-Freestanding multilayer graphene films on the carbon face of SiC},
author = {Siegel, D A and Hwang, C G and Fedorov, A V and Lanzara, A},
abstractNote = {The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.},
doi = {},
url = {https://www.osti.gov/biblio/986541}, journal = {PHYSICAL REVIEW B},
issn = {1098-0121},
number = 24,
volume = 81,
place = {United States},
year = {2010},
month = {6}
}