Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals

Journal Article · Tue Jun 01 00:00:00 EDT 2010 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-010-1105-8· OSTI ID:985528

Zhang, Y; Zhang, L; Chen, H; Choi, G; Raghothamachar, B; Dudley, M; Edgar, J H; Grasza, K; Tymicki, E; Su, D; Zhu, Y

A model is presented for the nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC boules. Inhomogeneous densities of screw dislocations lead to uneven growth rates, resulting in complex step overgrowth processes which can partially suppress the Burgers vector of a 15R 1c screw dislocation through the creation of Frank faults and Frank partial dislocations. Combined with stacking shifts induced by the passage of basal plane partial dislocations, it is shown that the partial Burgers vector suppression can leave behind a residual 6H 1c dislocation, which then acts as a nucleus for reproduction of 6H-SiC structure in the 15R-SiC crystal.

• Research Organization: Brookhaven National Laboratory (BNL) Center For Functional Nanomaterials
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: AC02-98CH10886
• OSTI ID: 985528
• Report Number(s): BNL--93805-2010-JA; KC020401H
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 6 Vol. 39; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BURGERS VECTOR
DISLOCATIONS
NUCLEATION
REPRODUCTION
SCREW DISLOCATIONS
TEM
functional nanomaterials
polytype inclusion
screw dislocations