Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals
Journal Article
·
· Journal of Electronic Materials
A model is presented for the nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC boules. Inhomogeneous densities of screw dislocations lead to uneven growth rates, resulting in complex step overgrowth processes which can partially suppress the Burgers vector of a 15R 1c screw dislocation through the creation of Frank faults and Frank partial dislocations. Combined with stacking shifts induced by the passage of basal plane partial dislocations, it is shown that the partial Burgers vector suppression can leave behind a residual 6H 1c dislocation, which then acts as a nucleus for reproduction of 6H-SiC structure in the 15R-SiC crystal.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 985528
- Report Number(s):
- BNL-93805-2010-JA; JECMA5; R&D Project: NC-001; KC020401H; TRN: US201016%%2042
- Journal Information:
- Journal of Electronic Materials, Vol. 39, Issue 6; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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