Codoped direct-gap semiconductor scintillators
Patent
·
OSTI ID:984448
- Pinole, CA
- Berkeley, CA
- Danville, CA
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 7,404,913
- Application Number:
- 11/382,883
- OSTI ID:
- 984448
- Country of Publication:
- United States
- Language:
- English
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