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Codoped direct-gap semiconductor scintillators

Patent ·
OSTI ID:1175746
; ; ;
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
Research Organization:
The Regents of the University of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
7,048,872
OSTI ID:
1175746
Country of Publication:
United States
Language:
English

References (7)

Optical Absorption Edges of ZnO and CdS journal January 1965
Edge emission of n-type conducting ZnO and CdS journal November 1966
A fast inorganic scintillator journal June 1968
Donor–acceptor pair transitions in ZnO substrate material journal December 2001
Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO journal January 2001
High Conductivity in Gallium-Doped Zinc Oxide Powders journal January 1996
Superfast timing performance from ZnO scintillators
  • Simpson, P. J.; Tjossem, R.; Hunt, A. W.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 505, Issue 1-2 https://doi.org/10.1016/S0168-9002(03)01025-8
journal June 2003

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