A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 983215
- Report Number(s):
- LBNL-3364E; TRN: US201014%%834
- Resource Relation:
- Conference: SPIE Advanced Lithography, San Jose, CA, February 21-25, 2010
- Country of Publication:
- United States
- Language:
- English
Similar Records
Evaluating Printability of Buried Native EUV Mask Phase Defects through a Modeling and Simulation Approach
Determining the critical size of EUV mask substrate defects