Printability and inspectability of Defects on the EUV Mask for sub32nm Half Pitch HVM Application
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1051256
- Report Number(s):
- LBNL-5075E
- Journal Information:
- Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 7969; ISSN PSISDG; ISSN 0277-786X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Printability and inspectability of programmed pit defects on teh masks in EUV lithography
EUV actinic defect inspection and defect printability at the sub-32 nm half pitch