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Title: Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

Abstract

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish an interface layer that is strongly pinned antiferromagnetically to the Fe. The interface layer remains polarized at room temperature.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Advanced Light Source Division
OSTI Identifier:
983045
Report Number(s):
LBNL-3191E
Journal ID: ISSN 1098-0121; TRN: US1004348
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B
Country of Publication:
United States
Language:
English
Subject:
75; MAGNETIC CIRCULAR DICHROISM; FERROMAGNETIC MATERIALS; LAWRENCE BERKELEY LABORATORY

Citation Formats

Olejnik, K., Wadley, P., Haigh, J., Edmonds, K. W., Campion, R. P., Rushforth, A. W., Gallagher, B. L., Foxon, C. T., Jungwirth, T., Wunderlich, J., Dhesi, S. S., Cavill, S., van der Laan, G., and Arenholz, E. Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal. United States: N. p., 2009. Web.
Olejnik, K., Wadley, P., Haigh, J., Edmonds, K. W., Campion, R. P., Rushforth, A. W., Gallagher, B. L., Foxon, C. T., Jungwirth, T., Wunderlich, J., Dhesi, S. S., Cavill, S., van der Laan, G., & Arenholz, E. Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal. United States.
Olejnik, K., Wadley, P., Haigh, J., Edmonds, K. W., Campion, R. P., Rushforth, A. W., Gallagher, B. L., Foxon, C. T., Jungwirth, T., Wunderlich, J., Dhesi, S. S., Cavill, S., van der Laan, G., and Arenholz, E. Thu . "Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal". United States. https://www.osti.gov/servlets/purl/983045.
@article{osti_983045,
title = {Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal},
author = {Olejnik, K. and Wadley, P. and Haigh, J. and Edmonds, K. W. and Campion, R. P. and Rushforth, A. W. and Gallagher, B. L. and Foxon, C. T. and Jungwirth, T. and Wunderlich, J. and Dhesi, S. S. and Cavill, S. and van der Laan, G. and Arenholz, E.},
abstractNote = {We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish an interface layer that is strongly pinned antiferromagnetically to the Fe. The interface layer remains polarized at room temperature.},
doi = {},
journal = {Physical Review B},
number = ,
volume = ,
place = {United States},
year = {Thu Nov 05 00:00:00 EST 2009},
month = {Thu Nov 05 00:00:00 EST 2009}
}