Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal
Journal Article
·
· Physical Review B
OSTI ID:983045
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish an interface layer that is strongly pinned antiferromagnetically to the Fe. The interface layer remains polarized at room temperature.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 983045
- Report Number(s):
- LBNL-3191E; TRN: US1004348
- Journal Information:
- Physical Review B, Journal Name: Physical Review B; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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