Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time
Conference
·
OSTI ID:982925
In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist is monitored as molecular weight, photoacid generator (PAG) size, and development time are varied. These experiments show that PAG size influences corner biasing while molecular weight and development time do not. Large PAGs are shown to exhibit less corner biasing, and in some cases, lower corner rounding, than small PAGs. In addition, heavier resist polymers are shown to exhibit less corner rounding than lighter ones.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 982925
- Report Number(s):
- LBNL-3147E; TRN: US201014%%155
- Resource Relation:
- Conference: SPIE Advanced Lithography, San Jose, CA, February 22-25, 2010
- Country of Publication:
- United States
- Language:
- English
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