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Title: PROBING STRESS EFFECTS IN SINGLE CRYSTAL ORGANIC TRANSISTORS BY SCANNING KELVIN PROBE MICROSCOPY

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3389493· OSTI ID:982220

We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.

Research Organization:
Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
DE-AC09-08SR22470
OSTI ID:
982220
Report Number(s):
SRNL-STI-2010-00346; TRN: US201013%%917
Journal Information:
Applied Physics Letters, Vol. 96, Issue 20; ISSN 0003-6951
Country of Publication:
United States
Language:
English