PROBING STRESS EFFECTS IN SINGLE CRYSTAL ORGANIC TRANSISTORS BY SCANNING KELVIN PROBE MICROSCOPY
We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
- Research Organization:
- Savannah River Site (SRS), Aiken, SC (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC09-08SR22470
- OSTI ID:
- 982220
- Report Number(s):
- SRNL-STI-2010-00346; TRN: US201013%%917
- Journal Information:
- Applied Physics Letters, Vol. 96, Issue 20; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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